Electron radiation damage mechanisms in 2D MoSe2
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چکیده
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Understanding the interaction of the electron beam in 2D MoTe2 at different voltages
Modern low-voltage transmission electron microscopes (TEM) reach single atom resolution at low acceleration voltages in the range of 20-80 kV [1,2,3]. This gives the possibility to study materials with low knock-on thresholds. But not only knock-on damage plays a role in radiation damage but also mechanisms like radiolysis, heating, charging and chemical etching. It was shown for MoS2 at 80 kV ...
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